Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
نویسندگان
چکیده
منابع مشابه
SiGe Nanowires Grown by LPCVD using Ga-Au Catalysts
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.
متن کاملVertical SiGe Epitaxial Growth System
OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...
متن کاملstudy of cohesive devices in the textbook of english for the students of apsychology by rastegarpour
this study investigates the cohesive devices used in the textbook of english for the students of psychology. the research questions and hypotheses in the present study are based on what frequency and distribution of grammatical and lexical cohesive devices are. then, to answer the questions all grammatical and lexical cohesive devices in reading comprehension passages from 6 units of 21units th...
Raman and Ir Study of Narrow Bandgap A-sige and Μc-sige Films Deposited Using Different Hydrogen Dilution
Hydrogenated amorphous silicon-germanium (aSiGe:H) films and n-i-p solar cells near the threshold of microcrystalline formation have been prepared by plasma enhanced chemical vapor deposition (PECVD) with a fixed germane to disilane ratio of 0.72 and a wide range of hydrogen dilution RH=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240. The effects of RH on the structural ...
متن کاملDeposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
Articles you may be interested in Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition Appl. n-Si /i-p-i SiGe /n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy Study of thin film deposition processes employing variable kinetic energy...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2006
ISSN: 0103-9733
DOI: 10.1590/s0103-97332006000300063